Gate metal formation on gallium nitride or aluminum gallium nitride
US11990343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2019 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Mar 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an electrode structure for a device, such as a GaN or AlGaN device is described. In one example, the method includes providing a substrate (212) of GaN or AlGaN with a surface region of the GaN or AlGaN exposed through an opening (216) in a layer of silicon nitride (214) formed on the substrate. The method further includes depositing layers of W (222), in one example, or Ni (220) and W (222), in another example, on the substrate and the layer of silicon nitride using reactive evaporation and photoresist layers (230) having an undercut profile for liftoff. The method further includes removing the photoresist layers having the undercut profile, and depositing layers of WN (224) and Al over the underlying layers of W or Ni and W by sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.