Semiconductor nanowire device having (111)-plane channel sidewalls
US11990476B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2022 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Aug 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having <111> lateral sidewalls along a <110> carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having <111> lateral sidewalls along a <110> carrier transport direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.