Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures
US11990520B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Nov 22, 2021 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Dec 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.