Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11996289B2 · kind B2 · utility
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Key dates
| Filing date | Jan 5, 2021 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Feb 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.