Patent · US Active

System and methods for wafer drying

US12002687B2 · kind B2 · utility

0Cited by

8References

16Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Trace Hurd · Plano, US
Antonio Luis Pacheco Rotondaro · Dallas, US
Derek Bassett · Austin, US
Hitoshi Kosugi · Kochi, JP

Key dates

Filing date	Nov 23, 2022
Grant date	Jun 4, 2024
Priority date	—
Expiry date	Nov 23, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/67184
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.