Patent · US Active

Low temperature chuck for plasma processing systems

US12009228B2 · kind B2 · utility

0Cited by
1,174References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 27, 2023
Grant dateJun 11, 2024
Priority date
Expiry dateFeb 27, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31138
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.