Apparatus for hydrogen assisted atmospheric radical oxidation

US12014920B2 · kind B2 · utility

Assignees

• Mattson Technology, Inc. · US
• Beijing E-Town Semiconductor Technology Co., Ltd. · CN

Inventors

• Michael X. Yang · Palo Alto, US
• Christian Pfahler · Ulm, DE
• Alexandr Cosceev · Lonsee, DE

Key dates

• Filing date: Dec 5, 2022
• Grant date: Jun 18, 2024
• Expiry date: Dec 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6719
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.