Patent · US Active

Tungsten gapfill using molybdenum co-flow

US12014956B2 · kind B2 · utility

0Cited by

2References

12Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Xi Cen · San Jose, US
Kai Wu · Palo Alto, US

Key dates

Filing date	Sep 28, 2021
Grant date	Jun 18, 2024
Priority date	—
Expiry date	Jun 16, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/53266
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.