HEMT and method of fabricating the same

US12015076B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chih-Wei Chang · Nan'ao, TW
• Yao-Hsien Chung
• Shih-Wei Su · Tainan, TW
• Hao-Hsuan Chang
• Da-Jun Lin
• Ting-An Chien · Tainan, TW
• Bin-Siang Tsai · Shiliujia, TW

Key dates

• Filing date: Jan 3, 2023
• Grant date: Jun 18, 2024
• Expiry date: Mar 2, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/514

Abstract

A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from that of the second III-V compound layer. A trench is disposed within the first III-V compound layer and the second III-V compound layer. The trench has a first corner and a second corner. The first corner and the second corner are disposed in the first III-V compound layer. A first dielectric layer contacts a sidewall of the first corner. A second dielectric layer contacts a sidewall of the second corner. The first dielectric layer and the second dielectric layer are outside of the trench. A gate is disposed in the trench. A source electrode and a drain electrode are respectively disposed at two sides of the gate. A gate electrode is disposed on the gate.