Method of determining defective die containing non-volatile memory cells
US12020762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2022 |
| Grant date | Jun 25, 2024 |
| Priority date | — |
| Expiry date | Mar 13, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.