Inventor · Sunnyvale, CA, US

Yuri Tkachev

13Patents

5h-index

31Co-inventors

62Inventor score

Filing activity: Nov 13, 2009 → Jan 14, 2022

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7868375B2	Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing	Electricity	138	Active
US7927994B1	Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing	Electricity	46	Active
US8711636B2	Method of operating a split gate flash memory cell with coupling gate	Electricity	17	Active
US9245638B2	Method of operating a split gate flash memory cell with coupling gate	Electricity	6	Active
US9123822B2	Split gate non-volatile flash memory cell having a silicon-metal floating gate and method of making same	Electricity	5	Active
US10714489B2	Method of programming a split-gate flash memory cell with erase gate	Physics	2	Active
US9275748B2	Low leakage, low threshold voltage, split-gate flash cell operation	Electricity	2	Active
US11018147B1	Method of forming split gate memory cells with thinned tunnel oxide	Electricity	2	Active
US9466732B2	Split-gate memory cell with depletion-mode floating gate channel, and method of making same	Electricity	1	Active
US9633735B2	System and method to inhibit erasing of portion of sector of split gate flash memory cells	Physics	1	Active
US11362218B2	Method of forming split gate memory cells with thinned side edge tunnel oxide	Electricity	0	Active
US12020762B2	Method of determining defective die containing non-volatile memory cells	Physics	0	Active
US11393535B2	Ultra-precise tuning of analog neural memory cells in a deep learning artificial neural network	Physics	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.