Patent · US Active

Edge-emitting semiconductor laser

US12021350B2 · kind B2 · utility

0Cited by

8References

19Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Jan Wagner · Donaustauf, DE
Werner Bergbauer · Windberg, DE
Christoph Eichler · Donaustauf, DE
Alfred Lell · Maxhütte-Haidhof, DE
Georg Brüderl · Burglengenfeld, DE
Matthias Peter · Orpund, CH

Key dates

Filing date	Nov 12, 2019
Grant date	Jun 25, 2024
Priority date	—
Expiry date	Apr 14, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/173
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0≤x≤1, 0≤y<1 and x+y≤1, wherein at least one layer of the layer system includes an aluminum portion x≤0.05 or an indium portion y≥0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.