Methods for selective deposition using self-assembled monolayers
US12024770B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Aug 8, 2019 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Sep 16, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/145
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.