Adaptive time sense parameters and overdrive voltage parameters for wordlines at corner temperatures in a memory sub-system
US12026394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2022 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Aug 17, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that a temperature associated with the memory device satisfies a threshold criterion; determining a memory access operation type of the memory access operation; and performing the memory access operation on the set of cells associated with the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.