Methods for filling a gap and related systems and devices
US12027365B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 19, 2021 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Jan 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.