Selective etch using a sacrificial mask
US12027375B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Feb 11, 2020 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Nov 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.