Methods for GAA I/O formation by selective epi regrowth
US12027607B2 · kind B2 · utility
1Cited by
1References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 18, 2022 |
| Grant date | Jul 2, 2024 |
| Priority date | — |
| Expiry date | Jun 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electronic devices and methods of forming electronic devices with gate-all-around non-I/O devices and finlike structures for I/O devices are described. A plurality of dummy gates is etched to expose a fin comprising alternating layers of a first material and a second material. The second material layers are removed to create openings and the first material layers remaining are epitaxially grown to form a finlike structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.