Methods for forming a semiconductor structure and related semiconductor structures
US12040184B2 · kind B2 · utility
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2,217References
19Claims
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Key dates
| Filing date | Jan 11, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jul 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.