In-die metrology methods and systems for process control
US12040187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Nov 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.