Airgap structures in auto-doped region under one or more transistors
US12046633B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2021 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Aug 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/642
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to airgap structures in a doped region under one or more transistors and methods of manufacture. The structure includes: a semiconductor material comprising a doped region; one or more sealed airgap structures breaking up the doped region of the semiconductor material; and a field effect transistor over the one or more sealed airgap structures and the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.