Electrode formation
US12046658B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2019 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Feb 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.