Patent · US Active

Read disturb management

US12051471B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 22, 2022
Grant dateJul 30, 2024
Priority date
Expiry dateJan 27, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/0483
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An example system can include a memory device and a processing device. The memory device can include a group of memory cells. The processing device can be coupled to the memory device. The processing device can be configured to determine a distance of a memory die from a center of a memory component. The processing device can be configured to perform a read disturb operation on the memory die based on the determined distance use a first voltage window for a set of memory cells of the group of memory cells during a first time period.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.