Metal line structure and method
US12051646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2021 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Jan 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second conductive line has been removed, and the first conductive line and the second conductive line have respective cross sectional shapes including a rounded surface and two rounded corners and depositing a second dielectric layer over the substrate, while leaving a first air gap between the first conductive line and the second conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.