Method of making high critical temperature metal nitride layer
US12052935B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2021 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Feb 3, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/442
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.