Large diameter silicon carbide wafers
US12054850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2020 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | May 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0475
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.