Patent · US Active

Semiconductor device fabricated using channeling implant

US12057316B2 · kind B2 · utility

0Cited by

1References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Moriz Jelinek · Villach, AT
Paul Ellinghaus · Unterhaching, DE
Axel Koenig · Wolfsburg, DE
Caspar Leendertz · Munich, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT

Key dates

Filing date	Sep 16, 2021
Grant date	Aug 6, 2024
Priority date	—
Expiry date	Jul 16, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a <0001> direction or a <11-23> direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.