Rapid flush purging during atomic layer deposition
US12060639B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 15, 2020 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Oct 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.