Fabrication of gate-all-around integrated circuit structures having adjacent island structures

US12068314B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Leonard P. GULER · Hillsboro, US
• William Hsu · Hillsboro, US
• Biswajeet Guha · Hillsboro, US
• Martin Weiss · Margertshausen, DE
• Apratim Dhar · Urbana, US
• William T. BLANTON · Hillsboro, US
• John H. IRBY, IV · Hillsboro, US
• James F. BONDI · Beaverton, US
• Michael K. Harper · Hillsboro, US
• Charles H. Wallace · Portland, US
• Tahir Ghani · Portland, US
• Benedict A. SAMUEL · Hillsboro, US
• Stefan DICKERT · Hillsboro, US

Key dates

• Filing date: Sep 18, 2020
• Grant date: Aug 20, 2024
• Expiry date: Dec 19, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0128

Abstract

Gate-all-around integrated circuit structures having adjacent island structures are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A first vertical arrangement of horizontal nanowires is above a first fin protruding from the semiconductor substrate. A channel region of the first vertical arrangement of horizontal nanowires is electrically isolated from the fin. A second vertical arrangement of horizontal nanowires is above a second fin protruding from the semiconductor substrate. A channel region of the second vertical arrangement of horizontal nanowires is electrically isolated from the second fin. The semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires.