Resistive switching memory devices and method(s) for forming the resistive switching memory devices
US12075712B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Feb 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
Fabrication of resistive switching memory devices is herein provided. By way of example, a method for a two-step etch for fabricating a non-volatile resistive memory device is disclosed. In another example, a method for a three-step etch for fabricating a non-volatile resistive memory device is provided. Still other embodiments disclose a method for fabricating a non-volatile metal nitrogen/metal oxygen resistive switching memory device. Further embodiments disclose a method for fabricating a volatile resistive switching selector device. Processes for forming protective spacers in conjunction with fabricating a disclosed resistive memory device are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.