Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas
US12077854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2022 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Jul 8, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.