Tungsten deposition

US12077858B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Pragna Nannapaneni · San Jose, US
• Novy Tjokro · Union City, US
• Sema Ermez · San Jose, US
• Ruopeng Deng · San Jose, US
• Tianhua Yu · Tracy, US
• Xiaolan Ba · Fremont, US
• Sanjay Gopinath · Fremont, US

Key dates

• Filing date: Aug 10, 2020
• Grant date: Sep 3, 2024
• Expiry date: Aug 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/27
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.