Atomic layer etch and ion beam etch patterning

US12080562B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Samantha Tan · Fremont, US
• Tamal Mukherjee · Fremont, US
• Wenbing Yang · Fremont, US
• Girish Dixit · San Jose, US
• Yang Pan · Singapore, SG

Key dates

• Filing date: Sep 9, 2020
• Grant date: Sep 3, 2024
• Expiry date: Mar 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/334
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.