Method of forming interconnect structure
US12080595B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Aug 25, 2021 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Jul 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming an interconnect structure. The method includes preparing a substrate including a first metal layer and a first insulating layer, selectively forming a carbon layer having an sp2 bonding structure on the first metal layer, selectively forming a second insulating layer on the first insulating layer, forming a third insulating layer to cover the second insulating layer, and forming a second metal layer electrically connected to the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.