Fabrication of thin film fin transistor structure

US12080781B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Noriyuki Sato · Hillsboro, US
• Sarah Atanasov · Beaverton, US
• Abhishek A. Sharma · Hillsboro, US
• Bernhard Sell · Dresden, DE
• Chieh-Jen Ku · Hillsboro, US
• Elliot N. Tan · Portland, US
• Hui Jae Yoo · Hillsboro, US
• Travis W. Lajoie · Forest Grove, US
• Van H. Le · Portland, US
• Pei-Hua Wang · Beaverton, US
• Jason Anthony Peck · Andover, US
• Tobias Brown-Heft · Portland, US

Key dates

• Filing date: Dec 21, 2020
• Grant date: Sep 3, 2024
• Expiry date: Nov 2, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

Thin film transistors fabricated using a spacer as a fin are described. In an example, a method of forming a fin transistor structure includes patterning a plurality of backbone pillars on a semiconductor substrate. The method may then include conformally depositing a spacer layer over the plurality of backbone pillars and the semiconductor substrate. A spacer etch of the spacer layer is then performed to leave a sidewall of the spacer layer on a backbone pillar to form a fin of the fin transistor structure. Other embodiments may be described and claimed.