Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm
US12085846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2021 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Dec 28, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm is provided, including: obtaining first mask data according to a target pattern, and constructing a level set function; performing forward simulation, so as to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask; obtaining a photoresist pattern according to the electric field distribution on the photoresist, and calculating an imaging error between the photoresist pattern and the target pattern; performing accompanying simulation, so as to obtain a second structural vector electric field distribution; obtaining a level set gradient by means of performing calculation according to the first structural vector electric field distribution, the second structural vector electric field distribution and the imaging error; and evolving the level set function, performing update to obtain second mask data, and performing iterative calculation until mask data meeting a preset condition is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.