Mask topology optimization method and system for surface plasmon near-field photolithography

US12092960B2 · kind B2 · utility

Assignee

• Institute of Optics and Electronics, Chinese Academy of Sciences · CN

Inventors

• Xiangang Luo · Fremont, US
• Mingfeng Xu · Hefei, CN
• Mingbo Pu · Chengdu, CN
• Di Sang · Sichuan, CN
• Xiaoliang Ma · Port Matilda, US
• Xiong Li · Allen, US
• Ping Gao · Hong Kong, CN
• Zeyu Zhao · Sichuan, CN

Key dates

• Filing date: Oct 14, 2021
• Grant date: Sep 17, 2024
• Expiry date: Oct 14, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G06F30/398
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.