Plasma treatment process to densify oxide layers

US12094709B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jung Chan Lee · Sunnyvale, US
• Mun Kyu Park · San Jose, US
• Jun Seok Lee · Suwon-si, KR
• Euhngi Lee · Austin, US
• Kyu-Ha Shim · Andover, US
• Deven Matthew Raj Mittal · Middleton, US
• Sungho Jo · East Sharon, US
• Timothy J. Miller · Ipswich, US
• Jingmei Liang · San Jose, US
• Praket P. Jha · San Jose, US
• Sanjay Kamath · Fremont, US

Key dates

• Filing date: Jul 30, 2021
• Grant date: Sep 17, 2024
• Expiry date: Dec 26, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/121
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.