Method of making high critical temperature metal nitride layer

US12096701B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Zihao Yang · Santa Clara, US
• Mingwei Zhu · Sunnyvale, US
• Shriram Mangipudi · Santa Clara, US
• Mohammad Kamruzzaman Chowdhury · Santa Clara, US
• Shane Lavan · Palo Alto, US
• Zhebo Chen · San Jose, US
• Yong Cao · Goleta, US
• Nag B. Patibandla · Pleasanton, US

Key dates

• Filing date: May 22, 2023
• Grant date: Sep 17, 2024
• Expiry date: May 22, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G01J2001/442
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.