Patent · US Active

Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone

US12107141B2 · kind B2 · utility

0Cited by

0References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Jens Peter Konrath · Villach, AT
Andre Rainer Stegner · Unterhaching, DE
Helmut Strack · Hersbruck, DE

Key dates

Filing date	Mar 10, 2022
Grant date	Oct 1, 2024
Priority date	—
Expiry date	Mar 10, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8325
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Z1/2 defects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.