Non-volatile memory with zoned control for limiting programming for different groups of non-volatile memory cells
US12119065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Oct 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory system limits the amount of programming for a first type of group of non-volatile memory cells based on a first parameter such that a maximum number of programming pulses applied to the first type of group of non-volatile memory cells to program to the last data state after the first type of group of non-volatile memory cells completed programming to the other data states is X programming pulses. The non-volatile memory system limits the amount of programming for a second type of group of the non-volatile memory cells based on a second parameter such that a maximum number of programming pulses applied to the second type of group of non-volatile memory cells to program to the last data state after the second type of group of non-volatile memory cells completed programming to the other data states is Y programming pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.