SiC devices with shielding structure

US12119377B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Hell · Erlangen, DE
• Rudolf Elpelt · Erlangen, DE
• Caspar Leendertz · Munich, DE

Key dates

• Filing date: Oct 20, 2021
• Grant date: Oct 15, 2024
• Expiry date: Jan 19, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.