Patent · US Active

Chuck for plasma processing chamber

US12131890B2 · kind B2 · utility

0Cited by
5References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 4, 2020
Grant dateOct 29, 2024
Priority date
Expiry dateDec 19, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.