Selective etching with fluorine, oxygen and noble gas containing plasmas
US12131914B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Jan 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.