Field-effect transistor and method of forming the same
US12136657B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jun 29, 2023 |
| Grant date | Nov 5, 2024 |
| Priority date | — |
| Expiry date | Jun 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate including a semiconductor material. The semiconductor device includes a conduction channel of a transistor disposed above the substrate. The conduction channel and the substrate include a similar semiconductor material. The semiconductor device includes a source/drain region extending from an end of the conduction channel. The semiconductor device includes a dielectric structure. The source/drain region is electrically coupled to the conduction channel and electrically isolated from the substrate by the dielectric structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.