Patent · US Active

Semiconductor device having contact trenches extending from opposite sides of a semiconductor body

US12136670B2 · kind B2 · utility

0Cited by

7References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Zundel · Egmating, DE
Andreas Meiser · Unterhaching, DE
Hans-Peter Lang · Harburg, DE
Thorsten Meyer · Regensburg, DE
Peter Irsigler · Ried im Innkreis, AT

Key dates

Filing date	May 25, 2022
Grant date	Nov 5, 2024
Priority date	—
Expiry date	May 2, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/013
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.