Chalcogen precursors for deposition of silicon nitride
US12142477B2 · kind B2 · utility
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6References
17Claims
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Key dates
| Filing date | Apr 14, 2023 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Apr 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.