Method and chamber for backside physical vapor deposition
US12142478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2022 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Sep 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68707
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.