Device to control uniformity of extracted ion beam
US12154753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2021 |
| Grant date | Nov 26, 2024 |
| Priority date | — |
| Expiry date | Jan 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/083
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.