Patent · US Active

Tungsten molybdenum structures

US12159804B2 · kind B2 · utility

0Cited by
36References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 9, 2022
Grant dateDec 3, 2024
Priority date
Expiry dateOct 22, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/28568
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.