Semiconductor devices including ferroelectric materials
US12167610B2 · kind B2 · utility
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12References
19Claims
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Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Mar 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.